FOD617
Overview
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. * * FOD617A: 40-80% FOD817: 50-600% FOD617B: 63-125% FOD817A:80-160% FOD617C: 100-200% FOD817B: 130-260% FOD617D: 160-320% FOD817C:200-400% FOD814: 20-300% FOD817D:300-600% FOD814A: 50-150% C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms Minimum BVCEO of 70V guaranteed Higher operating temperatures (versus H11AXXX counterparts).
- AC input response (FOD814 only)
- Applicable to Pb-free IR reflow soldering
- Compact 4-pin package
- Current transfer ratio in selected groups: tm
